GENERAL ELECTRIC COMPANY - ABRICATION OF SMALL-FEATURE EXTREME ENVIRONMENT DURABLE 4H-SIC SILICON CARBIDE (SIC) JUNCTION FIELD EFFECT INTEGRATED CIRCUITS ON 100 MM DIAMETER SIC WAFERS

On Feb 3, 2026, National Aeronautics and Space Administration obligated $278,753 to GENERAL ELECTRIC COMPANY for abrication of small-feature extreme environment durable 4h-sic silicon carbide (sic) junction field effect integrated circuits on 100 mm diameter sic wafers. The award is classified under NAICS 541715 — RESEARCH AND DEVELOPMENT IN THE PHYSICAL, ENGINEERING, AND LIFE SCIENCES (EXCEPT NANOTECHNOLOGY AND BIOTECHNOLOGY) and issued as a firm fixed price contract. Competition extent: full and open competition with 5 offers received. The procurement used a NO SET ASIDE USED. set-aside. Performance is located in SCHENECTADY, NY. The contract is scheduled through Sep 1, 2026 — approximately 3 months remaining.